powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 1 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d complementary pair enhancement mode mosfet powerdi ? 5060 - 8 product summary device v (br)dss r ds(on) i d t a = + 25c q1 12v 17 m? @ v gs = 4.5 v 9.5a 25 m? @ v gs = 2 .5v 7.8a q2 - 12v 3 2 m? @ v gs = - 4.5 v - 6.9a 5 3 m? @ v gs = - 2 .5v - 5.4a description and applications this new generation c omplementary pair enhancement mode mosfet has been designed to minimize r ds(on) and yet maintain superior switching performance. this device is ideal for use in notebook battery power management and loadswitch. ? notebook battery power management ? dc - dc converters ? loadswitch features and benefits ? thermally efficient package - cooler running applications ? high conversion efficiency ? lo w r ds( on ) C min imizes on state losses ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di5 060 - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? weight: 0.097 grams (approximate) ordering information (note 4 ) part number case packaging dm c101 7 u p d - 13 p ower di5060 - 8 2500 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant 2. see http://ww w.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromi ne, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view pin1 s 1 d 2 d 1 g 2 d 1 d 2 g1 s 2 q1 n - channel mosfet q2 p - channel mosfet d 1 s1 g 1 d 2 s 2 g2 s 1 d 1 g1 s 2 g 2 d 1 d 2 d 2 c1 01 7 u d yy ww = manufacturers marking not recommended for new design use dmc1018upd
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 2 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d ma ximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol q1 value q2 value units drain - source voltage v dss 12 - 12 v gate - source voltage v gss 8 8 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = +25c t a = +70c i d 9.5 7.6 - 6.9 - 5.5 a t<10s t a = +25c t a = +70c i d 13.0 10.4 - 9.4 - 7.5 a maximum body diode forward current i s 2 - 2 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 50 - 35 a avalanche current (note 6) l = 0.1mh i as 9.7 - 9.2 a avalanche ener gy (note 6) l = 0.1mh e as 4.7 4.3 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) t a = +25c p d 2.3 w t a = + 70 c 1.5 thermal resistance, junction to ambient (note 5 ) s teady state r ja 54 c/w t<10s 29 thermal resistance, junction to case (note 5 ) r j c 4.1 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics q1 n - chann e l (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit te st condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 12 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ? ? ds = 12 v, v gs = 0v gate - source leakage i gss ? ? ? gs = 8 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 0.6 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? gs = 4.5 v, i d = 11.8 a ? gs = 2 .5v, i d = 9.8 a diode forward voltage v sd ? gs = 0v, i s = 2.9 a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = 6 v, v gs = 0v , f = 1.0mh z output capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5v ) q g ? ? ? ds = 6 v, i d = 11.8 a total gate charge ( v gs = 10 v ) q g ? ? gs ? ? gd ? ? d(on) ? ? d d = 6 v, r l = 6 v g s = 4.5 v, r g = 6 d = 1a turn - on rise time t r ? ? d(off) ? ? f ? ? ? ? rr ? ? f = 11.8 a, di/dt = 1 0 0a/s rr ? ? f = 11.8 a, di/dt = 1 0 0a/ s notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 6. i as and e as rating are based on low frequency and duty cycles to keep t j = 25 c . 7 . short duration pulse test used to minimize self - heating effect. 8 . g uaranteed by design. not subject to product testing.
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 3 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 0 0.5 1 1.5 2 2.5 3 v = 1.2v gs v = 1.3v gs v = 1.5v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 12 14 16 18 20 v = 2.5v gs v = 4.5v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 12 14 16 18 20 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 10a gs d v = v i = 5a gs d 2.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 -50 -25 0 25 50 75 100 125 150 v = .5v i = 5a gs d 2 v = v i = 10a gs d 4.5
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 4 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 125c a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = -55c a t = 25c a t = 85c a v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 0 5 10 15 20 25 30 35 40 v = 6v i = a ds d 11.8
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 5 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d electrical characteristics q 2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 12 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? ds = - 12 v, v gs = 0v gate - source leakage i gss ? ? ? gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) - 0.6 ? ds = v gs , i d = - 250 a st atic drain - source on - resistance r ds (on) ? gs = - 4.5 v, i d = - 8.9 a ? gs = - 2 .5v, i d = - 6.9 a diode forward voltage v sd ? gs = 0v, i s = - 2.9 a dynamic characteristics (note 7 ) input capacitance c iss ? ? ds = - 6 v, v gs = 0v , f = 1.0mh z output capacitance c oss ? ? rss ? ? g ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 4.5v ) q g ? ? ? ds = - 6 v, i d = - 8.9 a total gate charge ( v g s = - 8 v ) q g ? ? gs ? ? gd ? ? d(on) ? ? d d = - 6 v, r l = 6 v g s = - 4.5 v, r g = 6 d = - 1a turn - on rise time t r ? ? d(off) ? ? f ? ? ? ? rr ? ? f = - 8.9 a, di/dt = - 1 0 0a/s rr ? ? f = - 8.9 a, di/dt = - 1 0 0a/s notes: 6. i as and e as rating are based on low frequency and d uty cycles to keep t j = 25 c . 7 . short duration pulse test used to minimize self - heating effect. -v , drain -source voltage (v) figure 11 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = -1.8v gs v = -2.0v gs v = -3.0v gs v = -4.0v gs v = -8.0v gs v = -4.5v gs v = -2.5v gs v = -3.5v gs -v , gate-source voltage (v) gs figure 12 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 6 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d -i , drain source current (a) figure 13typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2 4 6 8 10 12 14 16 18 20 v = -4.5v gs v = -2.5v gs -i , drain source current (a) figure 14 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.009 0.012 0.015 0.018 0.021 0.024 0.027 0.03 0 2 4 6 8 10 12 14 16 18 20 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs t , junction temperature ( c) j ? figure 15 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = -5a gs d v = -4.5v i = -10a gs d t , junction temperature ( c) j ? figure 16 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 -50 -25 0 25 50 75 100 125 150 v = -2.5v i = a gs d -5 v = 5v i = a gs d -4. -10 t , ambient temperature (c) figure 17 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d -v , source-drain voltage (v) figure 18 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 t = 125 c a ? 1.5 t = 150 c a ? t = 25 c a ? t = 85 c a ? t = -55 c a ?
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 7 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d c , j u n c t i o n c a p a c i t a n c e ( p f ) t -v , drain-source voltage (v) figure 19 typical junction capacitance ds c iss 100 1000 10000 0 2 4 6 8 10 12 f = 1mhz c oss c rss q , total gate charge (nc) figure 20 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 2 4 6 8 0 5 10 15 20 25 30 35 40 v = -6v i = -8.9a ds d t1, pulse duration times (sec) figure 21 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 104c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 8 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap0200 2.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap0200 1 .pdf for latest version. powerdi5060 - 8 dim min max typ a 0. 90 1.10 1.00 a1 0 0.05 0.02 b 0. 33 0. 51 0. 41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 1.40 1.60 1.50 d3 - - 3.98 e 6.15 bsc e1 5.75 5 .85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k - - 1.27 k1 0.56 - - l 0. 51 0. 71 0. 61 la 0. 51 0. 71 0. 61 l1 0.05 0.20 0.175 l4 - - 0.125 m 3.50 3.71 3.605 x - - 1.400 y - - 1.900 10 12 11 1 6 8 7 all dimensions in mm dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 3.910 x2 1.650 x3 1.650 x4 4.420 y 1.270 y1 1.020 y2 3.810 y3 6. 610 detail a 0(4x) seating plane a1 c e 01(4x) d1 e1 d e 1 y x ?1.000 depth 0.070.030 a detail a l k m l1 d2 la e2 b(8x) e/2 1 b1(8x) b2(2x) d2 k1 d3 l4 1 8 y3 x4 y1 y2 x1 g1 x c y(4x) g x2 x3
powerdi is a registered trademark of diodes incorporated. dm c101 7 u p d document number: d s 36903 rev. 2 - 3 9 of 9 www.diodes.com december 2017 ? diodes incorporated dm c1 01 7 u p d important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a partic ular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document a nd any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rig hts, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on di odes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be co vered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format rele ased by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorpo rated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use pr ovided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the fai lure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they a re solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, lif e support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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